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MDO 500
High Power Diode Modules
IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V
3 2
VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM
VRRM VDRM V 1200 1400 1600 1800 2000 2200
Type
3
2
MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Maximum Ratings 880 560 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 15000 16000 13000 14400 1125000 1062000 845000 813000 -40...140 140 -40...125 A A A A A A A2s A2s As A2s C C C V~ V~
2
Test Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873
q q q q q
I2t
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies
q q q q
TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
3000 3600
Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits
q q q
Mounting torque (M6) Terminal connection torque (M8) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 1200 A; TVJ = 25C
4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 650 g Characteristic Values mA 30 1.3 0.8 0.38 0.072 0.096 21.7 9.6 50 V V mW K/W K/W mm mm m/s2
Dimensions in mm (1 mm = 0.0394")
For power-loss calculations only (TVJ = TVJM) DC current DC current Creeping distance on surface Creepage distance in air Maximum allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
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MDO 500
14000 107 1000
VR = 0V
ITSM
12000 A 10000 8000
I2t 50 Hz 80 % VRRM TVJ = 45C TVJ = 140C
A2s
IFAVM
A 900 800 700 600
DC 180 sin 120 60 30
TVJ = 45C
10 6000
6
500
TVJ = 140C
400 300 200
4000 2000
100 0 0.001 10 0.01 0.1
5
0 1 t ms 10 0 25 50 75 100
TC
s t
1
125 C 150
Fig. 1 Surge overload current IFSM: Crest value, t: duration
1200 Ptot W 1000
Fig. 2 I2t versus time (1-10 ms)
Fig. 3 Maximum forward current at case temperature Fig. 4 Power dissipation versus forward current and ambient temperature
RthKA K/W
800
0.03 0.07 0.12 0.2 0.3 0.4 0.6
DC 180 sin 120 60 30
600
400
200
0 0 200 400 600 800 A IFAVM 0 25 50 75 100 125 C TA 150
3200 W 2800 Ptot 2400 2000 1600 1200 800 400 0 0 300 600 900 1200 A0 25 50 75 100 C 125 TA 150 IdAVM Circuit B2 4xMDO500
R
L
RthKA K/W
0.015 0.03 0.04 0.05 0.07 0.01 0.14
Fig. 5 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
(c) 2000 IXYS All rights reserved
2-3
MDO 500
5000 W 4500 Ptot 4000 3500 3000 2500 2000 1500 1000 500 0 0 300 600 900 1200 1500A IdAVM 0 25 50 75 100 125 C 150 TA Circuit B6 6xMDO500
RthKA K/W
0.01 0.02 0.03 0.045 0.06 0.08 0.12
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.12 K/W 0.10
Fig. 7 Transient thermal impedance junction to case RthJC for various conduction angles d:
ZthJC
0.08
d DC 180 120 60 30
RthJC (K/W) 0.072 0.0768 0.081 0.092 0.111
0.06 30 60 120 180 DC
0.04
0.02
Constants for ZthJC calculation: i Rthi (K/W) 0.0035 0.0186 0.0432 0.0067 ti (s) 0.0054 0.098 0.54 12 1 2 3 4
0.00 10-3
10-2
10-1
100
101 t
s
102
0.14 K/W 0.12 ZthJK
Fig. 8 Transient thermal impedance junction to heatsink RthJK for various conduction angles d:
0.10 0.08 0.06 0.04 0.02 0.00 10-3 30 60 120 180 DC
d DC 180 120 60 30
RthJK (K/W) 0.096 0.1 0.105 0.116 0.135
Constants for ZthJK calculation: i Rthi (K/W) 0.0035 0.0186 0.0432 0.0067 0.024 ti (s) 0.0054 0.098 0.54 12 12 1 2 3 4 5
10-2
10-1
100
101 t
s
102
(c) 2000 IXYS All rights reserved
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